Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …
electronics industry for more than half a century. However, cubic silicon (Si), germanium …
Cathodoluminescence nanoscopy: state of the art and beyond
Z Dang, Y Chen, Z Fang - ACS nano, 2023 - ACS Publications
Cathodoluminescence (CL) nanoscopy is proven to be a powerful tool to explore nanoscale
optical properties, whereby free electron beams achieve a spatial resolution far beyond the …
optical properties, whereby free electron beams achieve a spatial resolution far beyond the …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Nanosecond Carrier Lifetime of Hexagonal Ge
Hexagonal Si1–x Ge x with suitable alloy composition promises to become a new silicon
compatible direct bandgap family of semiconductors. Theoretical calculations, however …
compatible direct bandgap family of semiconductors. Theoretical calculations, however …
Employing cathodoluminescence for nanothermometry and thermal transport measurements in semiconductor nanowires
Thermal properties have an outsized impact on efficiency and sensitivity of devices with
nanoscale structures, such as in integrated electronic circuits. A number of thermal …
nanoscale structures, such as in integrated electronic circuits. A number of thermal …
A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
We report the first study on do** assessment in Te-doped GaAsSb nanowires (NWs) with
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …
GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi… - Nanoscale, 2022 - pubs.rsc.org
With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
Electron‐Induced Chirality‐Selective Routing of Valley Photons via Metallic Nanostructure
Valleytronics in 2D transition metal dichalcogenides has raised a great impact in
nanophotonic information processing and transport as it provides the pseudospin degree of …
nanophotonic information processing and transport as it provides the pseudospin degree of …
Exciton-dielectric mode coupling in MoS2 nanoflakes visualized by cathodoluminescence
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs), possessing
unique exciton luminescence properties, have attracted significant attention for use in optical …
unique exciton luminescence properties, have attracted significant attention for use in optical …