Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

Abstract Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …

Adv. Mater. 2011, 23, 5364–5369 hexagonal pyramid structure for CL investigation because
the spatial resolution was not high enough to obtain clear CL images of nanometer-sized …

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN
multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) …

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that
provides emission over the entire 3–5 μm mid-infrared transmission window. Variable …

This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple
quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting …

The optical and physical properties of AlGaN-based deep ultraviolet light-emitting diodes
(UV LEDs) with various specific designs of staggered quantum wells (QWs) are numerically …

A novel nanopattern technique of nanospherical-lens photolithography is introduced to
fabricate the InGaN nanopyramid white (NPW) light-emitting diodes (LEDs) by selective area …

Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a
ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been …

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-
matched AlInGaN barrier layers have been investigated numerically by employing an …