Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications

J Ajayan, P Mohankumar, D Nirmal… - Materials Today …, 2023 - Elsevier
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …

Ferroelectric field‐effect‐transistor integrated with ferroelectrics heterostructure

S Baek, HH Yoo, JH Ju, P Sriboriboon… - Advanced …, 2022 - Wiley Online Library
To address the demands of emerging data‐centric computing applications, ferroelectric field‐
effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing …

Research progress on 2D ferroelectric and ferrovalley materials and their neuromorphic application

Y Tan, J Zheng, X Niu, Y Zhao, N Zhong, B Tian… - Science China Physics …, 2023 - Springer
Abstract Two-dimensional (2D) ferroelectric and ferrovalley materials have recently received
extensive attention due to their significant advantages for modern electronic devices, such …

Nonvolatile reconfigurable 2D Schottky barrier transistors

Z Zhao, S Rakheja, W Zhu - Nano letters, 2021 - ACS Publications
Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact
logic circuits with low power consumption in maintaining the configuration. In this paper, we …

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

X Jiang, X Hu, J Bian, K Zhang, L Chen… - ACS Applied …, 2021 - ACS Publications
Emerging data-intensive applications need to process data in situ by combining the logical
operations and data storage in a single chip. In this work, the high-quality bulk CuInP2S6 …

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

D Daw, H Bouzid, M Jung, D Suh, C Biswas… - Advanced …, 2024 - Wiley Online Library
Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by
efficient modulation of surface potential in transistors. While negative‐capacitance transition …

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6

J Zhou, A Chen, Y Zhang, D Pu, B Qiao, J Hu… - Advanced …, 2023 - Wiley Online Library
The recently unfolded ferroionic phenomena in 2D van der Waals (vdW) copper–indium–
thiophosphate (CuInP2S6 or CIPS) have received widespread interest as they allow for …

Tunable Band Alignments in 2D Ferroelectric α-In2Se3 Based Van der Waals Heterostructures

Z Wang, W Zhu - ACS Applied Electronic Materials, 2021 - ACS Publications
Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted substantial
research interest in recent years, due to their tremendous advantages, such as atomically …

Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

J Niu, S Jeon, D Kim, S Baek, HH Yoo, J Li, JS Park… - InfoMat, 2024 - Wiley Online Library
The rapid advancement of AI‐enabled applications has resulted in an increasing need for
energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for …

Giant Modulation of Second-Harmonic Generation in CuInP2S6 by Interfacing with MoS2 Atomic Layers

D Li, X Hou, F Kong, K Wang, X Hong - ACS nano, 2024 - ACS Publications
Probing and manipulating the intriguing nonlinear optical responses in van der Waals (vdW)
ferroelectrics offer opportunities for their applications in nanophotonics. Here, we report the …