Flexible and stretchable electronics can dramatically enhance the application of electronics
for the emerging Internet of Everything applications where people, processes, data and …

Negative bias temperature instability (NBTI), in which interface traps and positive oxide
charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in …

Lead-free tin perovskite solar cells (PSCs) show the most promise to replace the more toxic
lead-based perovskite solar cells. However, the efficiency is significantly less than that of …

The outstanding properties of SiO2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

In this paper we review the subject of oxide breakdown (BD), focusing our attention on the
case of the gate dielectrics of interest for current Si microelectronics, ie, Si oxides or …

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-
silicon solar cells. Their realization and integration into a convenient process flow have …

Electron paramagnetic resonance (EPR) measurements of Si/SiO 2 systems began over 30
years ago. Most EPR studies of Si/SiO 2 systems have dealt with two families of defects: P b …

Leakage currents introduced in the low‐field, direct‐tunneling regime of thin oxides during
high‐field stress are related to defects produced by hot‐electron transport in the oxide layer …

We present a unified phenomenological model of the low-field charge-buildup phenomenon
at ultrathin SiO 2-Si interfaces during negative-bias stresses at elevated temperatures and …

The discovery of strong luminescence at room temperature from silicon cluster has attracted
an enormous attention in recent years due to its potential applications in Si-based …