Device and circuit architectures for in‐memory computing

D Ielmini, G Pedretti - Advanced Intelligent Systems, 2020‏ - Wiley Online Library
With the rise in artificial intelligence (AI), computing systems are facing new challenges
related to the large amount of data and the increasing burden of communication between …

Stochastic memory devices for security and computing

R Carboni, D Ielmini - Advanced Electronic Materials, 2019‏ - Wiley Online Library
With the widespread use of mobile computing and internet of things, secured communication
and chip authentication have become extremely important. Hardware‐based security …

Emerging neuromorphic devices

D Ielmini, S Ambrogio - Nanotechnology, 2019‏ - iopscience.iop.org
Artificial intelligence (AI) has the ability of revolutionizing our lives and society in a radical
way, by enabling machine learning in the industry, business, health, transportation, and …

Prospect of spintronics in neuromorphic computing

J Zhou, J Chen - Advanced Electronic Materials, 2021‏ - Wiley Online Library
Neuromorphic computing emulates a biological brain at different levels of the computer
hierarchy by exploiting brain‐inspired principles in designing novel devices, algorithms, and …

In-memory computing with resistive memory circuits: Status and outlook

G Pedretti, D Ielmini - Electronics, 2021‏ - mdpi.com
In-memory computing (IMC) refers to non-von Neumann architectures where data are
processed in situ within the memory by taking advantage of physical laws. Among the …

In-memory computing for machine learning and deep learning

N Lepri, A Glukhov, L Cattaneo… - IEEE Journal of the …, 2023‏ - ieeexplore.ieee.org
In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …

[HTML][HTML] Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: challenges and perspectives

PK Mishra, M Sravani, A Bose, S Bhuktare - Journal of Applied Physics, 2024‏ - pubs.aip.org
Electronic spins provide an additional degree of freedom that can be used in modern spin-
based electronic devices. Some benefits of spintronic devices include nonvolatility, energy …

Simulation analysis of DMTJ-based STT-MRAM operating at cryogenic temperatures

E Garzón, R De Rose, F Crupi… - IEEE Transactions …, 2021‏ - ieeexplore.ieee.org
This article investigates spin-transfer torque magnetic random access memories (STT-
MRAMs) based on double-barrier magnetic tunnel junction (DMTJ) with two reference layers …

Defect injection, fault modeling and test algorithm generation methodology for STT-MRAM

SM Nair, R Bishnoi, MB Tahoori… - 2018 IEEE …, 2018‏ - ieeexplore.ieee.org
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising
alternative technology for on-chip memories due to several advantages such as high …

Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework

E Garzon, R De Rose, F Crupi, L Trojman, G Finocchio… - Integration, 2020‏ - Elsevier
This paper explores non-volatile cache memories implemented by spin-transfer torque
magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular …