The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …

The aim of this review paper is to describe in a comprehensive manner the current
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Carrier generation based on subbandgap two-photon absorption is demonstrated and
shown to be a viable alternative to the conventional single-photon excitation approach in …

In this paper we review the current status of device simulation of ionizing-radiation-induced
charge collection and single-event upset (SEU), with an emphasis on significant results of …

The generation and propagation of single event transients (SET) is measured and modeled
in SOI inverter chains with different designs. SET propagation in inverter chains induces …

Since the first publication of a successful practical two-fault attack on protected CRT-RSA
surprisingly little attention was given by the research community to an ensuing new …

As of 2013, the gold standard for assessing radiation-hardness assurance (RHA) for a
system, subsystem, or a component is accelerated radiation testing and/or pulsed laser …

Pulsed laser single-event upset test are used to pinpoint and characterize sensitive nodes of
circuits and to provide feedback relevant to the development and optimization of radiation …

The propagation of single event transients (SET) is measured and modeled in SOI and bulk
inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to …