Memristive technologies for data storage, computation, encryption, and radio-frequency communication

M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang… - Science, 2022 - science.org
Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …

Compute-in-memory chips for deep learning: Recent trends and prospects

S Yu, H Jiang, S Huang, X Peng… - IEEE circuits and systems …, 2021 - ieeexplore.ieee.org
Compute-in-memory (CIM) is a new computing paradigm that addresses the memory-wall
problem in hardware accelerator design for deep learning. The input vector and weight …

Challenges and trends of SRAM-based computing-in-memory for AI edge devices

CJ Jhang, CX Xue, JM Hung… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
When applied to artificial intelligence edge devices, the conventionally von Neumann
computing architecture imposes numerous challenges (eg, improving the energy efficiency) …

A computing-in-memory macro based on three-dimensional resistive random-access memory

Q Huo, Y Yang, Y Wang, D Lei, X Fu, Q Ren, X Xu… - Nature …, 2022 - nature.com
Non-volatile computing-in-memory macros that are based on two-dimensional arrays of
memristors are of use in the development of artificial intelligence edge devices. Scaling such …

Research progress on memristor: From synapses to computing systems

X Yang, B Taylor, A Wu, Y Chen… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
As the limits of transistor technology are approached, feature size in integrated circuit
transistors has been reduced very near to the minimum physically-realizable channel length …

Memristor-based hardware accelerators for artificial intelligence

Y Huang, T Ando, A Sebastian, MF Chang… - Nature Reviews …, 2024 - nature.com
Satisfying the rapid evolution of artificial intelligence (AI) algorithms requires exponential
growth in computing resources, which, in turn, presents huge challenges for deploying AI …

A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices

YC Chiu, WS Khwa, CS Yang, SH Teng, HY Huang… - Nature …, 2023 - nature.com
Artificial intelligence edge devices should offer high inference accuracy and rapid response
times, as well as being energy efficient. Ensuring the security of these devices against …

HERMES-Core—A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

R Khaddam-Aljameh, M Stanisavljevic… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
We present a 256 256 in-memory compute (IMC) core designed and fabricated in 14-nm
CMOS technology with backend-integrated multi-level phase change memory (PCM). It …

16.1 A 22nm 4Mb 8b-precision ReRAM computing-in-memory macro with 11.91 to 195.7 TOPS/W for tiny AI edge devices

CX Xue, JM Hung, HY Kao, YH Huang… - … Solid-State Circuits …, 2021 - ieeexplore.ieee.org
Battery-powered tiny-AI edge devices require large-capacity nonvolatile compute-in-memory
(nvCIM), with multibit input (IN), weight (W), and output (OUT) precision to support complex …

4K-memristor analog-grade passive crossbar circuit

H Kim, MR Mahmoodi, H Nili, DB Strukov - Nature communications, 2021 - nature.com
The superior density of passive analog-grade memristive crossbar circuits enables storing
large neural network models directly on specialized neuromorphic chips to avoid costly off …