Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …
semiconducting materials known. Their unique optical, electronic and mechanical properties …
Scaling carbon nanotube complementary transistors to 5-nm gate lengths
High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate
length of 5 nanometers can be fabricated that perform better than silicon complementary …
length of 5 nanometers can be fabricated that perform better than silicon complementary …
Vasculature and lymphatic system imaging and ablation associated with a reservoir
RA Hyde, EKY Jung, NP Myhrvold… - US Patent …, 2012 - Google Patents
Filed: Oct. 5, 2007(57) In an embodiment, a system includes one or one or more (65) Prior
Publication Data reservoirs responsive to control circuitry for receiving US 2009/0093728A1 …
Publication Data reservoirs responsive to control circuitry for receiving US 2009/0093728A1 …
Silicon device scaling to the sub-10-nm regime
In the next decade, advances in complementary metal-oxide semiconductor fabrication will
lead to devices with gate lengths (the region in the device that switches the current flow on …
lead to devices with gate lengths (the region in the device that switches the current flow on …
Challenges for nanoscale MOSFETs and emerging nanoelectronics
YB Kim - transactions on electrical and electronic materials, 2010 - koreascience.kr
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main
key for continuous progress in silicon-based semiconductor industry over the past three …
key for continuous progress in silicon-based semiconductor industry over the past three …
Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET
Now a days, high-k dielectrics have been investigated as an alternative to Silicon dioxide
(SiO 2) based gate dielectric for nanoscale semiconductor devices. This paper is an attempt …
(SiO 2) based gate dielectric for nanoscale semiconductor devices. This paper is an attempt …
A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor
We have experimentally analyzed the leakage mechanism and device degradations caused
by the Fowler–Nordheim (F–N) and hot carrier stresses for the recently developed dynamic …
by the Fowler–Nordheim (F–N) and hot carrier stresses for the recently developed dynamic …
Predictive technology model for nano-CMOS design exploration
A predictive MOSFET model is critical for early circuit design research. In this work, a new
generation of Predictive Technology Model (PTM) is developed, covering emerging physical …
generation of Predictive Technology Model (PTM) is developed, covering emerging physical …
Pulsed high-density plasmas for advanced dry etching processes
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …