The von Neumann bottleneck and memory wall have posed fundamental limitations in
latency and energy consumption of modern computers based on von Neumann architecture …

Nonvolatile memory is distinguished for the application in many electronic products due to
its excellent charge storage ability. Nevertheless, as the device dimensions are scaled …

Nanofabrication techniques for achieving dimensional control at the nanometer scale are
generally equipment-intensive and time-consuming. The use of energetic beams of …

The conduction mechanism of metal oxide resistive switching memory is debated in the
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …

Among the recent discoveries of domain wall functionalities, the observation of electrical
conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on
a silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron …

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that
offer energy efficient device architectures and open pathways to neuromorphics and …

The ferroelectricity in fluorite-structured ferroelectrics such as HfO 2 and ZrO 2 has attracted
increasing interest in both academia and industry. Although the polarization switching …

Recently proposed novel neural network hardware designs imply the use of memristors as
electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most …