Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

J Wu, S Chen, A Seeds, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Quantum-sized nanomaterials for solar cell applications

S Kumar, M Nehra, A Deep, D Kedia, N Dilbaghi… - … and Sustainable Energy …, 2017 - Elsevier
To date, the development of clean and sustainable energy sources has been a central focal
point of research, supporting the worldwide rising demand for energy along with associated …

High irradiance performance of metal halide perovskites for concentrator photovoltaics

Z Wang, Q Lin, B Wenger, MG Christoforo, YH Lin… - Nature Energy, 2018 - nature.com
Traditionally, III–V multi-junction cells have been used in concentrator photovoltaic (CPV)
applications, which deliver extremely high efficiencies but have failed to compete with 'flat …

Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells

NS Beattie, P See, G Zoppi, PM Ushasree… - Acs …, 2017 - ACS Publications
The efficiency of a solar cell can be substantially increased by opening new energy gaps
within the semiconductor band gap. This creates additional optical absorption pathways …

[PDF][PDF] Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

S Vambol, V Vambol, I Bogdanov, Y Suchikova - 2017 - repositsc.nuczu.edu.ua
Усовершенствован способ фор-мирования пористого арсенида галлия в растворе
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …

Enhanced luminescence and optical performance through strain minimization in self-assembled InAs QDs using dual quaternary-ternary/ternary-quaternary cap**

J Saha, D Panda, D Das, V Chavan… - Journal of …, 2018 - Elsevier
Theoretical simulations are necessary to scientifically progress, envisage and gain the first
hand knowledge of the properties of semiconductor quantum dot (QD) structure. The impact …

[HTML][HTML] Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

Y Kim, KY Ban, CB Honsberg - Applied Physics Letters, 2015 - pubs.aip.org
We have studied the material properties and device performance of InAs/GaAs quantum dot
solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (SK) …

Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure

JS Kim, JO Kim, SK Noh, SJ Lee - Current Applied Physics, 2016 - Elsevier
To improve the efficiency of InAs quantum dot solar cells (QDSCs), we propose a QDSC
structure with sub-monolayer (SML) QDs. The optical and electrical properties of Stranski …

Thin GaAsSb cap** layers for improved performance of InAs/GaAs quantum dot solar cells

AD Utrilla, DF Reyes, JM Llorens, I Artacho… - Solar Energy Materials …, 2017 - Elsevier
This work reports on the benefits from using thin GaAsSb cap** layers (CLs) on InAs/GaAs
quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD …

Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure

D Panda, J Saha, A Balgarkashi, S Shetty… - Journal of Alloys and …, 2018 - Elsevier
Constraints of the single layer quantum dot (QD) led to the investigation of alternative
heterostructures for the next generation high performance optoelectronic devices. In this …