Resonant tunneling diodes containing closely double-stacked InAs quantum dots (QDs)
were grown on GaAs substrates by MBE. After growing a thin GaAs cap** layer on the …

We investigated the effect of dot size distribution and interlayer thickness on the optical
property of closely stacked self-assembled InAs/GaAs quantum dot (QD) structures with …

Ce travail de thèse porte sur l'étude de l'effet des boîtes quantiques d'InAs sur l'efficacité
de conversion des cellules solaires à simple jonction de GaAs crues par épitaxie par jets …

GaAs layers were grown by MBE on (631)-oriented substrates under a variety of growth
conditions. The structural properties of the samples were studied by atomic force microscopy …

One of the difficulties in understanding energy transfer in bilayer quantum dot structures is
the complex role of carrier tunneling. This limitation is due to the fact that, for most studies to …

We reviewed the self-formation control of InAs/GaAs quantum dots (QDs) by molecular beam
epitaxy. Uniform InAs/GaAs QDs were demonstrated by self size-limiting effect, the optimized …

We have studied the GaAs growth on (631) oriented substrates by molecular beam epitaxy
(MBE). Different samples were prepared by varying the growth temperature and the III/V …

Uniform InAs quantum dots (QDs) were closely stacked on self-formed GaAs nanoholes by
molecular beam epitaxy (MBE) using Stranski–Krastanov (SK) growth mode. GaAs …

In quantum dots (QD), the excitons are spatially confined and their energy spectrum, which
controls many physical properties of interest, can be adjusted over a wide range by tuning …

The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick
GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal …