Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Photoelectric detectors are the central part of modern photodetection systems with
numerous commercial and scientific applications. p‐Type semiconductor materials play …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐
dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic …

The incapability of modulating the photoresponse of assembled heterostructure devices has
remained a challenge for the development of optoelectronics with multifunctionality. Here, a …

The GaAsSb-based quantum well plays a very important role in optoelectronic devices due
to its excellent wavelength tunability. When the dimension reduces, the quantum …

The surface Fermi level pinning effect promotes the formation of metal‐independent Ohmic
contacts for the high‐speed GaSb nanowires (NWs) electronic devices, however, it limits …

The innovation of band‐gap engineering in advanced materials caused by the alloying of
different semiconductors into solid‐solution nanostructures provides numerous opportunities …

III-V ternary nanowires and nanowire heterostructures offer almost unlimited possibilities for
the band-gap design and can be integrated with Si electronic platform. Most of such …

Semiconductor nanowire lasers can produce guided coherent light emission with
miniaturized geometry, bringing about new possibilities for a variety of applications including …