Low-temperature plasma processing for Si photovoltaics

SQ **ao, S Xu, K Ostrikov - Materials Science and Engineering: R: Reports, 2014‏ - Elsevier
There has been a recent rapid expansion of the range of applications of low-temperature
plasma processing in Si-based photovoltaic (PV) technologies. The desire to produce Si …

Surface plasmon enhancement of optical absorption in thin-film silicon solar cells

YA Akimov, K Ostrikov, EP Li - Plasmonics, 2009‏ - Springer
Strong electromagnetic field enhancement that occurs under conditions of the surface
plasmon excitation in metallic nanoparticles deposited on a semiconductor surface is a very …

Plasma-aided fabrication in Si-based photovoltaic applications: an overview

SQ **ao, S Xu - Journal of Physics D: Applied Physics, 2011‏ - iopscience.iop.org
Plasma-aided fabrication has been largely employed in the photovoltaic industry and widely
reported in the literature for the growth of Si-based solar cells and the dry etching of Si …

Efficient outdoor performance of esthetic bifacial a-Si: H semi-transparent PV modules

SY Myong, SW Jeon - Applied Energy, 2016‏ - Elsevier
We developed bifacial transparent back contact (TBC) hydrogenated amorphous silicon (a-
Si: H) semi-transparent glass-to-glass photovoltaic (PV) modules with emotionally …

Hydrogenated amorphous silicon oxide solar cells fabricated near the phase transition between amorphous and microcrystalline structures

S Inthisang, K Sriprapha, S Miyajima… - Japanese journal of …, 2009‏ - iopscience.iop.org
We investigated the properties of hydrogenated amorphous silicon oxide (a-Si 1-x O x: H)
deposited near the phase transition between amorphous and microcrystalline structures. a …

Superstrate type flexible thin-film Si solar cells using flexible glass substrates

SY Myong, SW Kwon - Thin Solid Films, 2014‏ - Elsevier
We have investigated the flexible thin-film silicon (Si) solar cells fabricated on the flexible
glass substrates. The preliminary p–i–n type flexible hydrogenated amorphous silicon (a-Si …

Very high frequency plasma reactant for atomic layer deposition

IK Oh, G Yoo, CM Yoon, TH Kim, GY Yeom, K Kim… - Applied Surface …, 2016‏ - Elsevier
Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in
the formation of high-k dielectrics, including a low processing temperature and improved film …

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm s−1) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

S Li, S Miyajima - Solar RRL, 2024‏ - Wiley Online Library
The surface passivation quality of intrinsic hydrogenated amorphous silicon (i‐a‐Si: H)
layers deposited by constant DC power‐facing target sputtering (FTS) technology is …

Antireflective coating using a WO3–TiO2 nanoparticle photocatalytic composition for high efficiency thin-film Si photovoltaic modules

HN Noh, SY Myong - Solar energy materials and solar cells, 2014‏ - Elsevier
We propose a cost-effective, low-temperature antireflective coating for the outer glass
substrates of 1.43 m 2 thin-film Si photovoltaic modules using a WO 3–TiO 2 nanoparticle …

Nitriding process for next-generation semiconductor devices by VHF (162 MHz) multi-tile push-pull plasma source

YJ Ji, KS Kim, KH Kim, AR Ellingboe, GY Yeom - Applied Surface Science, 2020‏ - Elsevier
For the low power and high-performance semiconductor devices, a silicon oxynitride (SiO x
N y) layer is required as the gate sidewall spacer material by replacing oxygen of the silicon …