Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

Within the last decade, considerable efforts have been devoted to fabricating transistors
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …

Defects play a pivotal role in limiting the performance and reliability of nanoscale devices.
Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) …

The weak interlayer coupling in van der Waals solids allows isolation of individual atomic or
molecular layers with remarkable electrical, optical, and structural properties. The …

Abstract 2D materials are promising to overcome the scaling limit of Si field‐effect transistors
(FETs). However, the insulator/2D channel interface severely degrades the performance of …

As quantum technologies develop, a specific class of electrically conducting materials is
rapidly gaining interest because they not only form the core quantum‐enabled elements in …

This study investigates the simultaneous decoration of vertically aligned molybdenum
disulfide nanostructure (VA-MoS2) with Ag nanoparticles (NPs) and nitrogen …

Although MoS 2 field-effect transistors (FETs) with high-k dielectrics are promising for
electron device applications, the underlying physical origin of interface degradation remains …

Understanding the operation mode of a two-dimensional (2D) material-based field-effect
transistor (FET) is one of the most essential issues in the study of electronics and physics …