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Plasmons and magnetoplasmons in semiconductor heterostructures
MS Kushwaha - Surface Science Reports, 2001 - Elsevier
The purpose of this review is to survey the status of the theory and experiment which can
contribute to our knowledge of plasmon excitations in synthetic semiconductor …
contribute to our knowledge of plasmon excitations in synthetic semiconductor …
Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells
A sum rule for electronic intersubband transitions has been derived following Kane's model,
beyond the quadratic dispersion relations. The sum rule takes into account the effects of …
beyond the quadratic dispersion relations. The sum rule takes into account the effects of …
[KNIHA][B] Physics of quantum well devices
BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …
decades. Some of the devices have matured into commercially useful products and form part …
The basic physics of intersubband transitions
M Helm - Semiconductors and semimetals, 1999 - Elsevier
Publisher Summary This chapter focuses on the basic aspects of intersubband transitions,
with the main emphasis on linear absorption. An expression for the intersubband absorption …
with the main emphasis on linear absorption. An expression for the intersubband absorption …
Magneto-optical transport properties of monolayer phosphorene
The electronic properties of monolayer phosphorene are exotic due to its puckered structure
and large intrinsic direct band gap. We derive and discuss its band structure in the presence …
and large intrinsic direct band gap. We derive and discuss its band structure in the presence …
Relation between the interband dipole and momentum matrix elements in semiconductors
B Gu, NH Kwong, R Binder - Physical Review B—Condensed Matter and …, 2013 - APS
It is shown that a frequently used relation between the interband momentum and dipole
matrix elements (shortened to the “pr relation”) in semiconductors acquires an additional …
matrix elements (shortened to the “pr relation”) in semiconductors acquires an additional …
Infrared spectroscopy and transport of electrons in semiconductor superlattices
M Helm - Semiconductor science and technology, 1995 - iopscience.iop.org
Infrared spectroscopy is a powerful tool for revealing some key properties of electrons in the
minibands of semiconductor superlattices. Some theoretical foundations of superlattice …
minibands of semiconductor superlattices. Some theoretical foundations of superlattice …
Quantum dots and tunnel barriers in nanowire heterostructures: Electronic and optical properties
We compute the structural and electronic properties of⟨ 111⟩-oriented In As∕ In P
nanowire heterostructures using Keating's valence force field and a tight-binding model. We …
nanowire heterostructures using Keating's valence force field and a tight-binding model. We …
Fluorine derivatives of piceatannol for photobiological and photophysical applications by DFT approach
In the present work, we have calculated the electrical and optical properties of pure
piceatannol (PI) and its six fluorinated derivatives (F1-F6). The first-principles calculations …
piceatannol (PI) and its six fluorinated derivatives (F1-F6). The first-principles calculations …
Oscillator strength for intraband transitions in (In, Ga) As/GaAs quantum dots
VG Stoleru, E Towe - Applied physics letters, 2003 - pubs.aip.org
This letter reports on theoretical calculations of the oscillator strength associated with
electron intraband transitions in (In, Ga) As/GaAs quantum dots. We study the effect of dot …
electron intraband transitions in (In, Ga) As/GaAs quantum dots. We study the effect of dot …