With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and
fluences is investigated by using various experimental techniques. In H-implanted samples …

A comparative analysis of the residual stress distributions across the conductive channel of
Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) is presented. Stress was …

Integration of diamond and AlGaN/GaN high-electron mobility transistors (HEMTs)
terminated with an in situ grown SiN x interface layer via metal organic chemical vapor …

Abstract The dense Al 2 O 3-ZrO 2 ceramic composite prepared by spark plasma sintering
was irradiated by 500 keV He ions with different fluences and temperatures. The …

The remote epitaxy of GaN via graphene has attracted much attention due to the potential of
easy mechanical exfoliation, and the exfoliated layers can be transferred onto foreign …

Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the
epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical …

Growth of single-crystalline GaN on polycrystalline diamond is reported for the first time. The
structure was achieved using a combined process including selective diamond growth on …