Recent progress in solution‐based metal oxide resistive switching devices

E Carlos, R Branquinho, R Martins… - Advanced …, 2021 - Wiley Online Library
Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Solution combustion synthesis: towards a sustainable approach for metal oxides

E Carlos, R Martins, E Fortunato… - … –A European Journal, 2020 - Wiley Online Library
Solution combustion synthesis (SCS) has been widely used to produce simple and complex
oxides with a desired morphology (size and shape). SCS is valuable due to low cost …

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

ME Pereira, R Martins, E Fortunato… - Neuromorphic …, 2023 - iopscience.iop.org
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …

Emergent solution based IGZO memristor towards neuromorphic applications

RA Martins, E Carlos, J Deuermeier… - Journal of Materials …, 2022 - pubs.rsc.org
Solution-based memristors are emergent devices, due to their potential in electrical
performance for neuromorphic computing combined with simple and cheap fabrication …

Resistive switching properties in memristors for optoelectronic synaptic memristors: deposition techniques, key performance parameters, and applications

R Khan, NU Rehman, S Iqbal, S Abdullaev… - ACS Applied …, 2023 - ACS Publications
Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …

Solution-processed metal-oxide thin-film transistors: A review of recent developments

R Chen, L Lan - Nanotechnology, 2019 - iopscience.iop.org
Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs)
based on metal-oxide (MO) semiconductors have drawn great attention during recent years …

Printed, highly stable metal oxide thin‐film transistors with ultra‐thin high‐κ oxide dielectric

E Carlos, J Leppäniemi, A Sneck… - Advanced Electronic …, 2020 - Wiley Online Library
Lately, printed oxide electronics have advanced in the performance and low‐temperature
solution processability that are required for the dawn of low‐cost flexible applications …

Noble‐metal‐free memristive devices based on IGZO for neuromorphic applications

M Pereira, J Deuermeier, R Nogueira… - Advanced Electronic …, 2020 - Wiley Online Library
Amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) based memristive devices with
molybdenum contacts as both top and bottom electrodes are presented aiming to be used in …

Design and synthesis of low temperature printed metal oxide memristors

E Carlos, J Deuermeier, R Branquinho… - Journal of Materials …, 2021 - pubs.rsc.org
Resistive switching (RS) devices or memristors have received a lot of attention in the last
decade owing to their valuable and interesting properties, such as high-density, switching …

Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device

Y Qi, Z Shen, C Zhao, CZ Zhao - Journal of Alloys and Compounds, 2020 - Elsevier
A translucent resistance random access memory (RRAM) device with Ag/AlO x/indium tin
oxide (ITO) stack grown on a glass substrate were fabricated. The effect of the electrode …