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Recent progress in solution‐based metal oxide resistive switching devices
Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
Solution combustion synthesis: towards a sustainable approach for metal oxides
Solution combustion synthesis (SCS) has been widely used to produce simple and complex
oxides with a desired morphology (size and shape). SCS is valuable due to low cost …
oxides with a desired morphology (size and shape). SCS is valuable due to low cost …
Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …
appointed as the replacer of the outworn technology in conventional computing systems …
Emergent solution based IGZO memristor towards neuromorphic applications
Solution-based memristors are emergent devices, due to their potential in electrical
performance for neuromorphic computing combined with simple and cheap fabrication …
performance for neuromorphic computing combined with simple and cheap fabrication …
Resistive switching properties in memristors for optoelectronic synaptic memristors: deposition techniques, key performance parameters, and applications
R Khan, NU Rehman, S Iqbal, S Abdullaev… - ACS Applied …, 2023 - ACS Publications
Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …
devices are being investigated for data storage and data-driven computation. Resistive …
Solution-processed metal-oxide thin-film transistors: A review of recent developments
R Chen, L Lan - Nanotechnology, 2019 - iopscience.iop.org
Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs)
based on metal-oxide (MO) semiconductors have drawn great attention during recent years …
based on metal-oxide (MO) semiconductors have drawn great attention during recent years …
Printed, highly stable metal oxide thin‐film transistors with ultra‐thin high‐κ oxide dielectric
Lately, printed oxide electronics have advanced in the performance and low‐temperature
solution processability that are required for the dawn of low‐cost flexible applications …
solution processability that are required for the dawn of low‐cost flexible applications …
Noble‐metal‐free memristive devices based on IGZO for neuromorphic applications
Amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) based memristive devices with
molybdenum contacts as both top and bottom electrodes are presented aiming to be used in …
molybdenum contacts as both top and bottom electrodes are presented aiming to be used in …
Design and synthesis of low temperature printed metal oxide memristors
Resistive switching (RS) devices or memristors have received a lot of attention in the last
decade owing to their valuable and interesting properties, such as high-density, switching …
decade owing to their valuable and interesting properties, such as high-density, switching …
Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device
A translucent resistance random access memory (RRAM) device with Ag/AlO x/indium tin
oxide (ITO) stack grown on a glass substrate were fabricated. The effect of the electrode …
oxide (ITO) stack grown on a glass substrate were fabricated. The effect of the electrode …