A gas injection system, a reactor system including the gas injection system, and methods of
using the gas injection system and reactor system are disclosed. The gas injection system …

5,158,128 A D330, 900 S 5,167,716 A 5,176,451 A 5,178,682 A 5,181,779 A 5,183,511 A
5,192,717 A 5,194,401 A 5,199,603 A 5,213,650 A 5,221,556 A 5,225,366 A 5,226,383 A …

A method of forming an electrode on a substrate is disclosed. The method may include:
contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide …

H01L21/02263—Forming insulating materials on a substrate characterised by the process
for the formation of the insulating layer formation by a deposition process deposition from the …

2019-08-30 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

Int. Ci. F16K 49/00(2006.01) F16K 7/14(2006.01) HO5B 3/34(2006.01) H05B
1/02(2006.01)(52) US Cl.??? F16K 49/002 (2013.01); F16K 7/14 (2013.01); HO5B 1/0233 …

(57) ABSTRACT A flange, flange assembly, and reactor system including the flange and
flange assembly are disclosed. An exemplary flange assembly includes heated and cooled …

2020-03-30 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

A substrate processing method capable of uniformly main taining damage to a pattern
structure under a thin film formed on a substrate includes supplying a source material to a …

(57) ABSTRACT A method of forming a transition metal containing films on a substrate by a
cyclical deposition process is disclosed. The method may include: contacting the substrate …