Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Two-dimensional semiconductors, such as transition metal dichalcogenides, have
demonstrated tremendous promise for the development of highly tunable quantum devices …

Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …

The miniaturization of silicon-based electronics has motivated considerable efforts in
exploring new electronic materials, including two-dimensional semiconductors and halide …

Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential
in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub …

Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D)
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …

Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear
selector with high current density to address a specific memory cell and suppress leakage …

Radiofrequency (RF) switches are pervasive in modern communication and connectivity
systems such as cellular networks, satellite communications and radar systems …

Metal–semiconductor contacts are crucial components in semiconductor devices. Ultrathin
two‐dimensional transition‐metal dichalcogenide semiconductors can sustain transistor …