Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …

Topological defects can markedly alter nanomaterial properties. This presents opportunities
for “defect engineering,” where desired functionalities are generated through defect …

Crystallographic imperfections significantly alter material properties and their response to
external stimuli, including solute-induced phase transformations. Despite recent progress in …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

Coherent diffraction imaging enables the imaging of individual defects, such as dislocations
or stacking faults, in materials. These defects and their surrounding elastic strain fields have …

Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins
the development of modern microelectronics and optoelectronics, though the rigid and brittle …

A clear understanding of the mechanisms governing the growth of nanowires is crucial to
achieving control over their structures and properties. Here, we employ molecular dynamics …

Recent experimental investigations have confirmed the possibility to synthesize and exploit
polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles …

The growth direction of nanowires (NWs) can change during synthesis as a result of
stochastic processes or modulation of certain growth conditions. This phenomenon is known …

Crystalline Si nanowire (SiNW) springs, produced via a low temperature (< 350° C) thin film
technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic …