Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser
epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si …

We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as
dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on …

The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly
improve the performance of 1.3 μ m multilayer self-assembled InAs∕ InGaAs dot-in-a-well …

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser
diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot …

High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been
demonstrated as a promising solution to realize Si-based laser sources with very low …