A survey of test and reliability solutions for magnetic random access memories

P Girard, Y Cheng, A Virazel, W Zhao… - Proceedings of the …, 2020 - ieeexplore.ieee.org
Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a
significant part of system power consumption. Though widely used, nonvolatile Flash …

XNOR-bitcount operation exploiting computing-in-memory with STT-MRAMs

A Musello, E Garzón, M Lanuzza… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This brief presents an energy-efficient and high-performance XNOR-bitcount architecture
exploiting the benefits of computing-in-memory (CiM) and unique properties of spin-transfer …

Improving write performance for STT-MRAM

R Bishnoi, M Ebrahimi, F Oboril… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising
emerging memory technology because of its various advantageous features such as …

Spintronics and security: Prospects, vulnerabilities, attack models, and preventions

S Ghosh - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
The experimental demonstration of current-driven spin-transfer torque (STT) for switching
magnets and push domain walls (DWs) in magnetic nanowires have opened up new …

Low-power memristor-based computing for edge-AI applications

A Singh, S Diware, A Gebregiorgis… - … on Circuits and …, 2021 - ieeexplore.ieee.org
With the rise of the Internet of Things (IoT), a huge market for so-called smart edge-devices
is foreseen for millions of applications, like personalized healthcare and smart robotics …

Challenges and solutions in emerging memory testing

EI Vatajelu, P Prinetto, M Taouil… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The research and prototy** of new memory technologies are getting a lot of attention in
order to enable new (computer) architectures and provide new opportunities for today's and …

State of the art and challenges for test and reliability of emerging nonvolatile resistive memories

EI Vatajelu, P Pouyan… - International Journal of …, 2018 - Wiley Online Library
The power and reliability issues of today's memories (static and dynamic RAMs) reduce the
advances achieved by their implementation in scaled technology. There are several …

Survey of STT-MRAM cell design strategies: Taxonomy and sense amplifier tradeoffs for resiliency

S Salehi, D Fan, RF Demara - ACM Journal on Emerging Technologies …, 2017 - dl.acm.org
Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-
CMOS technology for embedded and data storage applications seeking non-volatility, near …

Design of defect and fault-tolerant nonvolatile spintronic flip-flops

R Bishnoi, F Oboril, MB Tahoori - IEEE Transactions on Very …, 2016 - ieeexplore.ieee.org
With technology down scaling, static power has become one of the biggest challenges in a
system on chip. Normally off computing using nonvolatile (NV) sequential elements is a …

Reliable nonvolatile memories: Techniques and measures

S Swami, K Mohanram - IEEE Design & Test, 2017 - ieeexplore.ieee.org
Reliability continues to be a severe challenge in the development of emerging memories. In
this article, the authors offer a comprehensive survey of reliability enhancement techniques …