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A comparative study of different physics-based NBTI models
Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …
the literature are reviewed, and the predictive capability of these models is benchmarked …
A modeling framework for NBTI degradation under dynamic voltage and frequency scaling
A modeling framework is proposed to predict the degradation and recovery of threshold
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …
[كتاب][B] Fundamentals of bias temperature instability in mos transistors
S Mahapatra - 2016 - Springer
Bias Temperature Instability (BTI) is a serious reliability concern and continues to threaten
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect …
In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …
NBTI in nanoscale MOSFETs—The ultimate modeling benchmark
After nearly half a century of research into the bias temperature instability, two classes of
models have emerged as the strongest contenders. One class of models, the reaction …
models have emerged as the strongest contenders. One class of models, the reaction …
Analysis of SRAM metrics for data dependent BTI degradation and process variability
Abstract Bias Temperature Instability (BTI) is one of the most crucial reliability issues in
modern CMOS technology. It leads to shift in device parameters, which eventually affect …
modern CMOS technology. It leads to shift in device parameters, which eventually affect …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
Universality of NBTI-From devices to circuits and products
This paper showcases the universality of NBTI and its dependencies on time, bias,
temperature, AC frequency and pulse duty cycle across different process integration …
temperature, AC frequency and pulse duty cycle across different process integration …
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation
NBTI and PBTI are studied in IL/HK/MG gate stacks having EOT down to~ 6Å and fabricated
using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT …
using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT …
Towards reliability-aware circuit design in nanoscale FinFET technology:—New-generation aging model and circuit reliability simulator
In this paper, an industry-level new-generation EDA solution for reliability-aware design in
nanoscale FinFET technology is presented for the first time, with new compact transistor …
nanoscale FinFET technology is presented for the first time, with new compact transistor …