The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research
due to their potential in next-generation electronics. While offering many unique properties …

Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional
electronic and quantum devices, where defects significantly impact performance. Therefore …

Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer
integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited …

While defects are undesirable for the reliability of electronic devices, particularly in scaled
microelectronics, they have proven beneficial in numerous quantum and energy-harvesting …

In this work, a self-consistent method is used to identify and describe defects plaguing 300
mm integrated 2D field-effect transistors. This method requires measurements of the transfer …

Substitutional do** has played a pivotal role in silicon-based electronics and holds
equivalent importance for emerging two-dimensional (2D) semiconductors, which show …

In traditional binary heterojunction catalysts, mismatched energy band structures lead to
higher electron transfer barriers. By reducing the work function difference via a ternary Ru …

In this study, the effects of vacancy defects and substitutional do** on the structural,
electronic, and linear optical characteristics of the magnesium dichloride (MgCl2) monolayer …

We present a method for assessing the quality of electronic material properties of thin-film
metal–oxide–semiconductor field-effect transistors (MOSFETs). By investigating samples …

We report distinct breakdown mechanisms in CVD monolayer MoS2 FET devices for the first
time mediated by either voltage or currents in devices. A detailed analysis of the breakdown …