Van der Waals heterostructures for high‐performance device applications: challenges and opportunities

SJ Liang, B Cheng, X Cui, F Miao - Advanced Materials, 2020 - Wiley Online Library
The discovery of two‐dimensional (2D) materials with unique electronic, superior
optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of …

Graphene transistors

F Schwierz - Nature nanotechnology, 2010 - nature.com
Graphene has changed from being the exclusive domain of condensed-matter physicists to
being explored by those in the electron-device community. In particular, graphene-based …

Tunnel field-effect transistors as energy-efficient electronic switches

AM Ionescu, H Riel - nature, 2011 - nature.com
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply
voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in …

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

S Kanungo, G Ahmad, P Sahatiya… - npj 2D Materials and …, 2022 - nature.com
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

Graphene transistors: status, prospects, and problems

F Schwierz - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
Graphene is a relatively new material with unique properties that holds promise for
electronic applications. Since 2004, when the first graphene samples were intentionally …

[KIRJA][B] Nanoelectronics and information technology: advanced electronic materials and novel devices

R Waser - 2012 - books.google.com
This outstanding textbook provides an introduction to electronic materials and device
concepts for the major areas of current and future information technology. On about 1,000 …

Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices

SK Chakraborty, B Kundu, B Nayak, SP Dash… - Iscience, 2022 - cell.com
Summary Two-dimensional (2D) materials such as graphene, transition metal
dichalcogenides (TMDs), and their heterojunctions are prospective materials for future …

Formation of bilayer bernal graphene: layer-by-layer epitaxy via chemical vapor deposition

K Yan, H Peng, Y Zhou, H Li, Z Liu - Nano letters, 2011 - ACS Publications
We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical
vapor deposition. The self-limit effect of graphene growth on copper is broken through the …

[KIRJA][B] Fundamentals of tunnel field-effect transistors

S Saurabh, MJ Kumar - 2016 - taylorfrancis.com
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Determination of the gate-tunable band gap and tight-binding parameters in bilayer graphene using infrared spectroscopy

AB Kuzmenko, I Crassee, D Van Der Marel… - Physical Review B …, 2009 - APS
We present a compelling evidence for the opening of a bandgap in exfoliated bottom-gated
bilayer graphene by fitting the gate-voltage-modulated infrared reflectivity spectra in a large …