In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities
Laser direct writing is a widely employed technique for 3D, contactless, and fast
functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort …
functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort …
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
The aim of this review paper is to describe in a comprehensive manner the current
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …
Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
Subbandgap laser-induced single event effects: Carrier generation via two-photon absorption
Carrier generation based on subbandgap two-photon absorption is demonstrated and
shown to be a viable alternative to the conventional single-photon excitation approach in …
shown to be a viable alternative to the conventional single-photon excitation approach in …
Pulsed-laser testing for single-event effects investigations
SP Buchner, F Miller, V Pouget… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated
circuits and devices is described. The role of a pulsed laser is to provide spatial and …
circuits and devices is described. The role of a pulsed laser is to provide spatial and …
New insights into single event transient propagation in chains of inverters—Evidence for propagation-induced pulse broadening
V Ferlet-Cavrois, P Paillet, D McMorrow… - … on Nuclear Science, 2007 - ieeexplore.ieee.org
The generation and propagation of single event transients (SET) is measured and modeled
in SOI inverter chains with different designs. SET propagation in inverter chains induces …
in SOI inverter chains with different designs. SET propagation in inverter chains induces …
Integrated silicon photonics for enabling next-generation space systems
A review of silicon photonics for space applications is presented. The benefits and
advantages of size, weight, power, and cost (SWaP-C) metrics inherent to silicon photonics …
advantages of size, weight, power, and cost (SWaP-C) metrics inherent to silicon photonics …
A digital CMOS design technique for SEU hardening
MP Baze, SP Buchner… - IEEE Transactions on …, 2000 - ieeexplore.ieee.org
A digital CMOS design technique for SEU hardening Page 1 IEEE TRANSACTIONS ON
NUCLEAR SCIENCE, VOL. 47, NO. 6, DECEMBER 2000 2603 A Digital CMOS Design …
NUCLEAR SCIENCE, VOL. 47, NO. 6, DECEMBER 2000 2603 A Digital CMOS Design …
Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains
V Ferlet-Cavrois, V Pouget, D McMorrow… - … on Nuclear Science, 2008 - ieeexplore.ieee.org
The propagation of single event transients (SET) is measured and modeled in SOI and bulk
inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to …
inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to …
Three-dimensional map** of single-event effects using two photon absorption
Carrier generation based on subbandgap two-photon absorption is used to perform three-
dimensional map** of the single-event transient response of the LM124 operational …
dimensional map** of the single-event transient response of the LM124 operational …