Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

US PATENT DOCUMENTS memory device. In some embodiments, the current limiting
component comprises a varistor that is a current limiting material disposed within a resistive …

Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of
conductive filaments through insulating materials, such as metal oxides and chalcogenide …

Resistive switching memory (RRAM) relies on the voltage-driven formation/disruption of a
conductive filament (CF) across a thin insulating layer. Due to the 1-D structure of the CF …

We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …

In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …

Resistive-switching random access memory (RRAM) based on the formation and the
dissolution of a conductive filament (CF) through insulating materials, eg, transition metal …

Abstract High density 3-dimensional (3D) crossbar resistive random access memory
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …