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Doped polar layers and semiconductor device incorporating same
The disclosed technology generally relates to ferroelectric materials and semiconductor
devices, and more particularly to semiconductor memory devices incorporating doped polar …
devices, and more particularly to semiconductor memory devices incorporating doped polar …
Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication
(57) ABSTRACT A perpendicular spin orbit torque (SOT) memory device includes an
electrode having a spin orbit torque material, where the SOT material includes iridium and …
electrode having a spin orbit torque material, where the SOT material includes iridium and …
Spin orbit torque (SOT) memory devices and their methods of fabrication
A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device
with one end coupled with a first electrode and an opposite end coupled with a second …
with one end coupled with a first electrode and an opposite end coupled with a second …
High blocking temperature spin orbit torque electrode
An apparatus is provided which comprises: a magnetic junction having a magnet with a first
magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect …
magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect …
Stacked transistor bit-cell for magnetic random access memory
An apparatus is provided which comprises: a magnetic junction (eg, a magnetic tunneling
junction or spin valve). The apparatus further includes a structure (eg, an intercon nect) …
junction or spin valve). The apparatus further includes a structure (eg, an intercon nect) …
Doped polar layers and semiconductor device incorporating same
The disclosed technology generally relates to ferroelectric materials and semiconductor
devices, and more particularly to semiconductor memory devices incorporating doped polar …
devices, and more particularly to semiconductor memory devices incorporating doped polar …
Doped polar layers and semiconductor device incorporating same
The disclosed technology generally relates to ferroelectric materials and semiconductor
devices, and more particularly to semiconductor memory devices incorporating doped polar …
devices, and more particularly to semiconductor memory devices incorporating doped polar …
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
An apparatus is provided which comprises: a magnetic junction including: a first structure
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy
An apparatus is provided which comprises: a magnetic junction including: a stack of
structures including: first structure comprising a magnet with an unfixed perpendicular …
structures including: first structure comprising a magnet with an unfixed perpendicular …
Magnetoelectric spin orbit logic transistor with a spin filter
An apparatus is provided which comprises: a first stack comprising a magnetic insulating
material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal …
material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal …