The GW approximation in electronic structure theory has become a widespread tool for
predicting electronic excitations in chemical compounds and materials. In the realm of …

Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb,
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …

Many efficient light-emitting devices and photodetectors are based on semiconductors with,
respectively, a direct or indirect bandgap configuration. The less known pseudodirect …

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables
the engineering of the electronic structure within a single material. This presupposes an …

We employ first-principles techniques tailored to properly describe semiconductors
(semilocal exchange potential added to the exchange-correlation functional), to obtain the …

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …

III-V compound semiconductor nanowires are generally characterized by the coexistence of
zincblende and wurtzite structures. So far, this polytypism has impeded the determination of …

Semiconductor nanowires (NWs) formed by non-nitride III–V compounds grow preferentially
with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same …

Hexagonal germanium in the lonsdaleite structure has a direct band gap, but it is not an
efficient light emitter due to the vanishing oscillator strength of electronic transitions at the …