Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors
have been widely studied for self-emissive displays. From chips to applications, integration …

Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …

Severe power consumption in the continuous scaling of Silicon‐based dynamic random
access memory (DRAM) technology quests for a transistor technology with a much lower off …

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film
transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have …

In the last decades, oxide thin-film transistors (TFTs) have been extensively developed for
optoelectronic applications owing to their outstanding electrical properties, such as excellent …

Metal-oxide semiconductors are considered promising alternative materials in the field of flat
panel display industry due to their advantages, such as high mobility, transparency …

Field-effect transistors (FETs) have tremendous applications in the electronics industry due
to their outstanding features such as small size, easy fabrication, compatibility with …

Organic thin‐film transistors are field‐effect transistors comprising a semiconductor in the
form of a thin, typically polycrystalline layer of conjugated organic molecules. Since organic …