CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …

In this paper, an 18nm do**less asymmetrical junctionless (AJ) double gate (DG)
MOSFET has been designed for suppressed short channel effects (SCEs) for low power …

In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …

In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET
(DMSG) by solving the Poisson equation has been proposed and verified using ATLAS …

Silicon nanowire (SiNW) structures are the essential foundations of the next generation
highly efficient and lowcost electronic devices because of their specific chemical, optical …

Abstract In this paper, Numerical Model for Electric Potential, Subthreshold Current and
Subthreshold Swing for Junctionless Double Surrounding Gate (JLDSG) MOSFEThas been …

The natural length of MOSFETs helps to describe the potential distribution in the Silicon
substrate. This natural length varies in different device structures, from a single gate to multi …

A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-
TFET) based on the solution of Laplace's equation is proposed. The band-to-band tunneling …

The structural improvement and rapid production of InP, InAs (III-V, binary), and AlGaAs (III-
V, ternary) compound semiconductor materials have invariably enabled its utilization in …

The advancements in semiconductor technology greatly impact the growth of hybrid VLSI
devices and components. The nanometer technology has been possibly executed due to the …