The high efficiencies reported for organic solar cells and an almost negligible thermal
activation measured for the photogeneration of charge carriers have called into question …

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy
through comprehensive spectroscopic characterization over a wide temperature range. A …

Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …

Groups III–V semiconductors have received a great deal of attention because of their
potential advantages for use in optoelectronic and electronic applications. Gallium …

Semiconductor nanowires have been identified as a viable technology for next-generation
infrared (IR) photodetectors with improved detectivity and detection across a range of …

We present a detailed experimental optical study supported by theoretical modeling of In As
quantum dots (QDs) embedded in an (In, Al, Ga) As barrier lattice matched to In P (001) …

The optical properties of GaSb strongly depend on the defect types and concentration.
Do** is an effective method to improve the optical properties by changing the native defect …

The effects of ex-situ annealing in a N 2 ambient on the properties of GaAs/GaAsSbN/GaAs
core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam …

GaAsSb is a useful ternary semiconductor compound alloy and heterostructures made of
GaSb x As 1-x facilitate versatile opto-electronic device applications. Thus, it is of significant …

InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) hold significant potential for mid-
infrared optoelectronics. However, their optical and structural behavior at high temperatures …