Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

Two-dimensional indium (III) selenide (In2Se3) is characterized by rich polymorphism and
offers the prospect of overcoming thickness-related depolarization effects in conventional …

Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics,
and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) …

Owing to the large built‐in field for efficient charge separation, heterostructures facilitate the
simultaneous realization of a low dark current and high photocurrent. The lack of an efficient …

Ferroelectric materials have shown great value in the modern semiconductor industry and
are considered important function materials due to their high dielectric constant and tunable …

Precise control of the conductivity of layered ferroelectric semiconductors is required to
make these materials suitable for advanced transistor, memory and logic circuits. Although …

The past few decades have witnessed extensive and intensive studies on ferroelectric
materials with switchable electric polarization due to their broad device applications …

Achieving robust and electrically controlled valley polarization in monolayer transition metal
dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications …

A van der Waals (vdW) α‐In2Se3 ferroelectric semiconductor channel–based field‐effect
transistor (FeS‐FET) has emerged as a next‐generation electronic device owing to its …