Theory of hot-electron quantum diffusion in semiconductors
P Kleinert - Physics reports, 2010 - Elsevier
In the linear response regime close to equilibrium, the fluctuation-dissipation theorem
relates linear transport coefficients via the well-known Green–Kubo or Einstein relation. The …
relates linear transport coefficients via the well-known Green–Kubo or Einstein relation. The …
[ΒΙΒΛΙΟ][B] Microwave noise in semiconductor devices
H Hartnagel, R Katilius, A Matulionis - 2001 - books.google.com
A thorough reference work bridging the gap between contemporary and traditional
approaches to noise problems Noise in semiconductor devices refers to any unwanted …
approaches to noise problems Noise in semiconductor devices refers to any unwanted …
Theory of the Monte Carlo method for semiconductor device simulation
H Kosina, M Nedjalkov… - IEEE Transactions on …, 2000 - ieeexplore.ieee.org
A brief review of the semiclassical Monte Carlo (MC) method for semiconductor device
simulation is given, covering the standard MC algorithms, variance reduction techniques, the …
simulation is given, covering the standard MC algorithms, variance reduction techniques, the …
Electronic noise of warm electrons in semiconductors from first principles
The ab initio theory of low-field electronic transport properties such as carrier mobility in
semiconductors is well-established. However, an equivalent treatment of electronic …
semiconductors is well-established. However, an equivalent treatment of electronic …
High-field charge transport and noise in -Si from first principles
DS Catherall, AJ Minnich - Physical Review B, 2023 - APS
The parameter-free computation of charge transport properties of semiconductors is now
routine owing to advances in the ab initio description of the electron-phonon interaction …
routine owing to advances in the ab initio description of the electron-phonon interaction …
[ΒΙΒΛΙΟ][B] Stochastic approaches to electron transport in micro-and nanostructures
Computational modeling is an important subject of microelectronics, which is the only
alternative to expensive experiments for design and characterization of the basic integrated …
alternative to expensive experiments for design and characterization of the basic integrated …
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory
C Jungemann, B Neinhus… - IEEE Transactions on …, 2002 - ieeexplore.ieee.org
Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD)
noise models are presented for Si and SiGe devices, which are based on the new concept of …
noise models are presented for Si and SiGe devices, which are based on the new concept of …
Maximum entropy principle within a total energy scheme: Application to hot-carrier transport in semiconductors
M Trovato, L Reggiani - Physical Review B, 2000 - APS
The maximum entropy principle is applied to a conducting band with energy wave vector
dispersion of general form and to an arbitrary number of generalized kinetic fields. By …
dispersion of general form and to an arbitrary number of generalized kinetic fields. By …
Maximum entropy principle and hydrodynamic models in statistical mechanics
M Trovato, L Reggiani - La Rivista del Nuovo Cimento, 2012 - Springer
This review presents the state of the art of the maximum entropy principle (MEP) in its
classical and quantum (QMEP) formulation. Within the classical MEP we overview a general …
classical and quantum (QMEP) formulation. Within the classical MEP we overview a general …
Maximum entropy principle for hydrodynamic transport in semiconductor devices
M Trovato, L Reggiani - Journal of applied physics, 1999 - pubs.aip.org
A hydrodynamic (HD) transport approach based on a closed system of balance equations is
developed from the maximum entropy principle. By considering a nonlinear expansion with …
developed from the maximum entropy principle. By considering a nonlinear expansion with …