The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP substrates were used to realize long …

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum
dash emitting at 1.55 μm at the elevated temperatures. The photon auto-correlation …

We investigate charged and neutral exciton complexes confined in a single self-assembled
InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm. The emission characteristics have …

Densely integrated devices on a single chip enable both complex functionality and economy
of scale. With a small footprint, microcavities with self-assembled InAs quantum dashes …

We present a theoretical and experimental investigation of exciton recombination dynamics
and the related polarization of emission in highly in-plane asymmetric nanostructures …

Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a
promising system for single-photon generation at the third telecom window of silica fibers …

We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …

Contrary to simplified theoretical models, atomistic calculations presented here reveal that
sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even …

Exciton and biexciton dynamics in a single self-assembled InAs/In 0.53 Ga 0.23 Al 0.24
As/InP (001) quantum dash emitting near 1.55 μm has been investigated by micro …