Band offsets of high K gate oxides on III-V semiconductors
J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
Nonmagnetic Ground State in Revealed by Muon Spin Rotation
The magnetic ground state of single crystalline RuO 2 was investigated by the muon spin
rotation and relaxation (μ SR) experiment. The spin precession signal due to the …
rotation and relaxation (μ SR) experiment. The spin precession signal due to the …
Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements
SFJ Cox - Reports on Progress in Physics, 2009 - iopscience.iop.org
Although the interstitial hydrogen atom would seem to be one of the simplest defect centres
in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst …
in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst …
Ambipolarity of hydrogen in matter revealed by muons
Despite being the simplest element, hydrogen (H) exhibits complex behavior in materials
due to its unique ambipolar character. In particular, it is recognized as one of the most …
due to its unique ambipolar character. In particular, it is recognized as one of the most …
Shallow donor state of hydrogen in and : Implications for conductivity in transparent conducting oxides
Muonium, and by analogy hydrogen, is shown to form a shallow-donor state in In 2 O 3 and
SnO 2. The paramagnetic charge state is stable below∼ 50 K in In 2 O 3 and∼ 30 K in SnO …
SnO 2. The paramagnetic charge state is stable below∼ 50 K in In 2 O 3 and∼ 30 K in SnO …
Behaviour of hydrogen in wide band gap oxides
H Li, J Robertson - Journal of Applied Physics, 2014 - pubs.aip.org
The defect formation energies and atomic geometries of interstitial hydrogen in its different
charge states in a number of wide band gap oxides are calculated by the Heyd, Scuseria …
charge states in a number of wide band gap oxides are calculated by the Heyd, Scuseria …
Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity
The electrical nature of muonium in the transparent conducting oxide material Ga 2 O 3 is
investigated via muon-spin rotation and relaxation spectroscopy. It is found to be a shallow …
investigated via muon-spin rotation and relaxation spectroscopy. It is found to be a shallow …
Intrinsic point-defect equilibria in tetragonal ZrO: Density functional theory analysis with finite-temperature effects
We present a density functional theory (DFT) framework taking into account the finite
temperature effects to quantitatively understand and predict charged defect equilibria in a …
temperature effects to quantitatively understand and predict charged defect equilibria in a …
Behavior of hydrogen in wide band gap oxides
K **ong, J Robertson, SJ Clark - Journal of Applied Physics, 2007 - pubs.aip.org
The energy levels of interstitial hydrogen in various wide band gap oxides are calculated
using a density function based method that does not need a band gap correction. The …
using a density function based method that does not need a band gap correction. The …
Defects in oxides in electronic devices
A Shluger - Handbook of materials modeling: applications: current …, 2020 - Springer
This chapter provides an overview of established models of some of the typical defects in
oxides used in microelectronic devices, highlighting some recent results of theoretical …
oxides used in microelectronic devices, highlighting some recent results of theoretical …