A review of GaN-based optoelectronic devices on silicon substrate
B Zhang, Y Liu - Chinese science bulletin, 2014 - Springer
Group III-nitride material system possesses some unique properties, such as large spectrum
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …
Dislocations and their reduction in GaN
SE Bennett - Materials Science and Technology, 2010 - Taylor & Francis
Gallium nitride (GaN) is a semiconductor used to make light emitting diodes, a technology
that could decrease global energy demands significantly if used worldwide. Yet there are …
that could decrease global energy demands significantly if used worldwide. Yet there are …
Metal organic vapour phase epitaxy of GaN and lateral overgrowth
P Gibart - Reports on Progress in Physics, 2004 - iopscience.iop.org
Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …
[КНИГА][B] МОС-гидридная эпитаксия в технологии материалов фотоники и электроники
Р Акчурин, А Мармалюк - 2022 - books.google.com
В книге рассмотрены теоретические и практические аспекты МОС-гидридной
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
Reduction of dislocations in GaN epilayers grown on Si (111) substrate using SixNy inserting layer
KJ Lee, EH Shin, KY Lim - Applied physics letters, 2004 - pubs.aip.org
High-quality GaN films have been grown on Si (111) substrate by metalorganic chemical
vapor deposition using a Si x N y inserting layer. Due to the large difference of lattice …
vapor deposition using a Si x N y inserting layer. Due to the large difference of lattice …
InGaN-GaN MQW leds with Si treatment
YP Hsu, SJ Chang, YK Su, SC Chen… - IEEE photonics …, 2005 - ieeexplore.ieee.org
Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers
with and without Si treatment were investigated by atomic force microscope and scanning …
with and without Si treatment were investigated by atomic force microscope and scanning …
Growth evolution of Si x N y on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality
The GaN epilayers were grown on Si (111) substrates via combining the techniques of AlN
buffer, the graded AlGaN structure and the SixNy interlayer by metalorganic chemical vapor …
buffer, the graded AlGaN structure and the SixNy interlayer by metalorganic chemical vapor …
Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition
WY Uen, ZY Li, SM Lan, SM Liao - Journal of crystal growth, 2005 - Elsevier
Single-crystalline GaN films were grown on Si (111) substrates by metal organic chemical
vapor deposition (MOCVD) using a silicon nitride (SiNx) buffer achieved through the …
vapor deposition (MOCVD) using a silicon nitride (SiNx) buffer achieved through the …
Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers
SC Wei, YK Su, SJ Chang, SM Chen… - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single
low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were …
low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were …
Nitride-based blue LEDs with GaN/SiN double buffer layers
GaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED)
structures with conventional single GaN buffer and GaN/SiN double buffers were prepared …
structures with conventional single GaN buffer and GaN/SiN double buffers were prepared …