Edge word-line reliability problem in 3-D NAND flash memory: Observations, analysis, and solutions
D Wei, H Feng, M Liu, Y Song, Z Piao… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The 3-D flash memory is gradually becoming the mainstream nonvolatile storage medium
due to its high capacity and high performance. However, interlayer interference during 3-D …
due to its high capacity and high performance. However, interlayer interference during 3-D …
Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications
X Lian, C Liu, J Fu, X Liu, Q Ren, X Wan, W **ao… - …, 2022 - iopscience.iop.org
Phase-change optical device has recently gained tremendous interest due to its ultra-fast
transmitting speed, multiplexing and large bandwidth. However, majority of phase-change …
transmitting speed, multiplexing and large bandwidth. However, majority of phase-change …