[HTML][HTML] Towards Energy Efficiency: Innovations in High-Frequency Converters for Renewable Energy Systems and Electric Vehicles

P Arévalo, D Ochoa-Correa, E Villa-Ávila - Vehicles, 2024 - mdpi.com
This study reviews advancements in high-frequency converters for renewable energy
systems and electric vehicles, emphasizing their role in enhancing energy efficiency and …

A Novel Mixed Control Strategy with Grid-Following and Grid-Forming for Renewable Energy Grid-Connected Inverter

Y Chen, Q Lu, P **e, Y Liu, Y Yang… - 2023 6th …, 2023 - ieeexplore.ieee.org
Grid-following (GFL) control features of fast and instant maxim power point tracking (MPPT)
is widely applied with the permeation of renewable energy. However, the stability of GFL …

A Novel SiC Trench MOSFET with Unilateral Deep P Buried Layer for Improved Short-circuit Capability

Y Wu, K Wang, J Yuan, F Guo, Z Cheng… - 2024 IEEE 2nd …, 2024 - ieeexplore.ieee.org
A novel silicon carbide (SiC) trench MOSFET with unilateral deep P buried layer (UP-MOS)
for improved short-circuit performance is proposed and characterized in this article. The …

A Voltage Controlled Oscillator (VCO) Based Controller and Feedback for a Single Switch SiC Class-E Resonant Inverter

FN Zghoul, OS Saadeh, Z Dalala… - … on Research and …, 2024 - ieeexplore.ieee.org
Increased electrification of applications such as home automation, vehicle technology and
health equipment continue to increase; power electronic solutions are becoming …

Analysis of the Switching Behavior of Gate Oxide Degradation for SiC MOSFETs in a Phase-Leg Configuration

B Wu, L Ran, H Lin, J **e, H Feng - 2024 7th International …, 2024 - ieeexplore.ieee.org
SiC MOSFETs exhibit reduced junction capacitance and enhanced switching speed when
compared to Si-based MOSFETs, while maintaining the same withstand voltage …

A Novel Cost-Efficient Die-Level SiC MOSFET TDDB Testing Methods Based on Paralleling Wire Bonding

M Wu, S Qiu, B Wang, Q Liu - 2024 6th International …, 2024 - ieeexplore.ieee.org
Silicon Carbide (SiC) MOSFETs are increasingly employed in power applications due to
their superior performance characteristics compared to traditional silicon (Si) devices …

A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance

W Chen, J Yuan, F Guo, Z Cheng, Y Wu… - 2024 IEEE 2nd …, 2024 - ieeexplore.ieee.org
A silicon (Si)/silicon carbide (SiC) heterojunction trench MOSFET with an electron tunneling
enhanced (ETER) and P+ shielding region (P+ SLD)(HJ-TMOS) is proposed to overcome …

Development of drive circuit for ultra-audio controlled source electromagnetic transmitter

R Zhang, M Wang, K Zhang, F Li, R Yu… - 2024 IEEE 2nd …, 2024 - ieeexplore.ieee.org
Electromagnetic transmitters serve as pivotal equipment in subterranean exploration
endeavors. The current study addresses the frequency emission spectrum for deep (200m …

Research and Design of 1700V 250A SiC MOSFET Driver

W Yao, N Libo, W Dongwen… - 2022 IEEE 4th …, 2022 - ieeexplore.ieee.org
In this paper, RoHM BSM250D17P2E004 as the driving object, the driver and protection
circuit of 1700V and 250A SiC MOSFET are studied and designed. The minimum pulse …