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Beyond the bandwidth limit: A tutorial on low-noise amplifier circuits for advanced systems based on III–V process
With the fast development of advanced communication systems, wideband low-noise
amplifiers (LNAs) have become more and more critical as they determine the overall …
amplifiers (LNAs) have become more and more critical as they determine the overall …
Design and analysis of a cascode distributed LNA with gain and noise improvement in 0.15-μm GaAs pHEMT technology
This brief presents a 2.0~ 42.0 GHz ultra-wide bandwidth Cascode distributed low-noise
amplifier (CDLNA) MMIC design. With the proposed coupled-line (CL) sections between …
amplifier (CDLNA) MMIC design. With the proposed coupled-line (CL) sections between …
A compact 1.0–12.5-GHz LNA MMIC with 1.5-dB NF based on multiple resistive feedback in 0.15-μm GaAs pHEMT technology
In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave
integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC …
integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC …
A 9-to-42-GHz high-gain low-noise amplifier using coupled interstage feedback in 0.15-μm GaAs pHEMT technology
This article presents a 3-stage millimeter-wave low-noise amplifier (LNA) monolithic
microwave integrated circuit (MMIC) design for broadband applications. The proposed …
microwave integrated circuit (MMIC) design for broadband applications. The proposed …
Analysis and design of a broadband receiver front end for 0.1-to-40-GHz application
J Hu, K Ma - IEEE Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
In this paper, a broadband receiver front end for 0.1 to 40 GHz application, fabricated using
0.15-μm GaAs E-mode pHEMT process, is reported. The receiver front end consists of a …
0.15-μm GaAs E-mode pHEMT process, is reported. The receiver front end consists of a …
Gain and Power Enhancement With Coupled Technique for a Distributed Power Amplifier in 0.25-m GaN HEMT Technology
In this article, a fully integrated 1.0–11.0-GHz wideband distributed power amplifier (DPA)
monolithic microwave integrated circuit (MMIC) design is presented. Particularly, a coupled …
monolithic microwave integrated circuit (MMIC) design is presented. Particularly, a coupled …
A Broadband 10–43-GHz High-Gain LNA MMIC Using Coupled-Line Feedback in 0.15-μm GaAs pHEMT Technology
In this letter, a 10–43-GHz low-noise amplifier (LNA) monolithic microwave integrated circuit
(MMIC) is designed in a commercial 0.15-GaAs E-mode pseudomorphic high electron …
(MMIC) is designed in a commercial 0.15-GaAs E-mode pseudomorphic high electron …
An X/Ku dual-band switch-free reconfigurable GaAs LNA MMIC based on coupled line
C **e, Z Yu, C Tan - IEEE Access, 2020 - ieeexplore.ieee.org
This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier
(LNA) realized by inter-stage and output-stage coupled lines. This article is the first switch …
(LNA) realized by inter-stage and output-stage coupled lines. This article is the first switch …
Analysis and design of a 0.1–23 GHz LNA MMIC using frequency-dependent feedback
In this brief, a 0.1 to 23 GHz low-noise amplifier (LNA) employing a frequency-dependent
feedback loop (FDFL) is presented. As predicted theoretically, the optimized FDFL enhances …
feedback loop (FDFL) is presented. As predicted theoretically, the optimized FDFL enhances …
Analysis and design of a 2-40.5 GHz low noise amplifier with multiple bandwidth expansion techniques
J Li, J Zeng, Y Yuan, D He, J Fan, C Tan, Z Yu - IEEE Access, 2023 - ieeexplore.ieee.org
This paper analyzes the main factors limiting the bandwidth expansion of low-noise
amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz. The LNA is …
amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz. The LNA is …