Ion implantation has been a key enabler, along with improvements in lithography, for the
40+ year evolution of MOS and then CMOS devices. Alterations in the channel do** levels …

Ion and electron irradiation can be used to modify not only conventional materials such as
silicon, but also nanostructures. This opens up exciting possibilities for basic science studies …

Using molecular dynamics simulations, model Zr 50 Cu 40 Al 10 metallic glass (MG)
nanopillars were subjected to simulated irradiation processes followed by uniaxial …

By using molecular dynamics simulations, we studied the ion irradiation induced damage in
mechanically strained Cu nanowires and evaluated the effects of damage on the …

It was recently proposed that within a particular window in the parameter space of
temperature, ion energy, dose rate, and filament diameter, nanoscale metallic foams could …

The mechanical properties of copper nanowires irradiated with energetic ions have been
investigated by using molecular dynamics simulations. The Cu ions with energies ranging …

We have used classical molecular dynamics methods to simulate the defect production of
small-cross-section GaN nanowires by Ar ion irradiation. We performed 200 random …

In this paper, the authors carried out a molecular dynamics simulation of crystal and
amorphous silicon sputtering by low-energy (200 eV) Ar ions at normal incidence. The …

This paper deals with different mechanisms of the interaction of light and heavy low-energy
ions with nanoporous structures and main structural changes that occur in these structures …

Irradiation of ultra-thin silicon carbide nanowires (SiC NWs) with low-energy ions was
investigated with the molecular dynamics (MD) method. The energies of the incident Si and …