Conventional transistors have long emphasized signal modulation and amplification, often
sidelining polarity considerations. However, the recent emergence of negative differential …

Electron tunneling devices attract attention due to their potential applications in integrated
circuits, memories, and high‐frequency oscillators. However, limited works are devoted to …

The fundamental advantages of carbon-based graphene material, such as its high
tunnelling probability, symmetric band structure (linear dependence of the energy band on …

Vacuum field emission transistors (VFETs) are emerging as promising alternatives to the
mainstream solid state electronic devices under some special hostile environments. Cutoff …

This article mainly focuses on the impact on interface trap charges (ITCs) on dual gate
source-drain Schottky barrier tunnel field effect transistor (DGSD-STFET) using a high-k …

The scope of the work is to investigate limitations in device scaling by identifying various
parameters of short channel effects (SCEs) in current challenging geometries of the line …

In this chapter, the performance of negative-capacitance L-shaped tunneling field-effect
transistors (NC-L-TFETs) and conventional L-TFETs is analyzed and compared by …

The negative differential transconductance (NDT) or negative gate transconductance has
been observed in conventional heterojunction TFET (HTFET) with gate/source alignment …

In this paper, we introduce three new structures of a cylindrical gate-all-around nanowire
(NW) field-effect transistor (FET) to achieve negative differential resistance (NDR) and …