Recent experiments on nanostructured materials, such as nanoparticles, nanowires,
nanotubes, nanopillars, thin films, and nanocrystals have revealed a host of “ultra-strength” …

GaN, AlN and InGaN have a polar wurtzite structure and epitaxial films of these materials
typically grow along the polar axis. Although the polarity of these nitrides has been studied …

CoCrFeMnNi high-entropy alloy (HEA) matrix composites reinforced with nano-sized TiC
particles were successfully fabricated by laser powder bed fusion (LPBF), which is widely …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

High entropy alloys (HEAs) have recently received extensive attention due to their appealing
mechanical performance given their simple phase formation. This study utilized laser …

Nitride semiconductors are the materials of choice for a variety of device applications,
notably optoelectronics, and high-frequency/high-power electronics. One important practical …

A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally
undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We …

The use of micro‐Raman spectroscopy to monitor non‐invasively GaN, AlGaN and AlN
material parameters for process and growth monitoring/control is demonstrated. Concepts to …

The stress states in unintentionally doped GaN epilayers grown on Si (111), 6H-SiC (0001),
and c-plane sapphire, and their effects on optical properties of GaN films were investigated …

Using micro-Raman spectroscopy, we have studied the vibrational properties of GaN and Al
0.5 Ga 0.5 N/GaN long period superlattices (SLs) grown on Si (111). Crack-free areas of …