Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications

Y Zhao, M Gobbi, LE Hueso, P Samorì - Chemical Reviews, 2021‏ - ACS Publications
Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

B Kirubasankar, YS Won, LA Adofo, SH Choi… - Chemical …, 2022‏ - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures
have attracted significant interest in both academia and industry because of their unusual …

The Covalent Functionalization of Surface‐Supported Graphene: An Update

C Wetzl, A Silvestri, M Garrido, HL Hou… - Angewandte …, 2023‏ - Wiley Online Library
In the last decade, the use of graphene supported on solid surfaces has broadened its
scope and applications, and graphene has acquire a promising role as a major component …

High Performance Semiconducting Nanosheets via a Scalable Powder-Based Electrochemical Exfoliation Technique

RA Wells, M Zhang, TH Chen, V Boureau, M Caretti… - ACS …, 2022‏ - ACS Publications
The liquid-phase exfoliation of semiconducting transition metal dichalcogenide (TMD)
powders into 2D nanosheets represents a promising route toward the scalable production of …

Solution-processed 2D transition metal dichalcogenides: materials to CMOS electronics

T Zou, YY Noh - Accounts of Materials Research, 2023‏ - ACS Publications
Conspectus Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs)
have demonstrated exceptional potential as materials for future complementary metal-oxide …

Defect engineering strategies toward controlled functionalization of solution‐processed transition metal dichalcogenides

S Ippolito, P Samorì - Small Science, 2022‏ - Wiley Online Library
Solution‐processed transition metal dichalcogenides (TMDs) are attracting unceasing
attention owing to their wide‐ranging portfolio of physicochemical properties, making them …

Defect Engineering of MoTe2 via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor

Y Jeong, B Han, A Tamayo, N Claes, S Bals… - ACS nano, 2024‏ - ACS Publications
Molybdenum ditelluride (MoTe2) nanosheets have displayed intriguing physicochemical
properties and opto-electric characteristics as a result of their tunable and small band gap (E …

Two-dimensional group-III nitrides and devices: a critical review

W Wang, H Jiang, L Li, G Li - Reports on Progress in Physics, 2021‏ - iopscience.iop.org
As third-generation semiconductors, group-III nitrides are promising for high power
electronic and optoelectronic devices because of their wide bandgap, high electron …

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

SM Obaidulla, A Supina, S Kamal, Y Khan… - Nanoscale …, 2024‏ - pubs.rsc.org
The near-atomic thickness and organic molecular systems, including organic
semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition …

Engineering the Interfacing of Molecules with 2D Transition Metal Dichalcogenides: Enhanced Multifunctional Electronics

B Han, P Samorì - Accounts of Chemical Research, 2024‏ - ACS Publications
Conspectus Engineering all interfaces between different components in electronic devices is
the key to control and optimize fundamental physical processes such as charge injection at …