[57] ABSTRACT A heterojunction device, and a method for producing the device. A gate air
bridge is formed at the mesa sidewall between the active region and the gate bonding pad …

DC and RF characteristics of InP/InAlAs/GaAsSb/InP double heterojunction bipolar
transistors (DHBTs) are reported. The device heterostructures include InAlAs spacer layer …

Heterojunction bipolar transistors are desirable for microwave applications because a low
base resistance can be achieved yielding high maximum frequency of oscillation. Here we …

The parasitic base-collector capacitance (C/sub BC/) in InP/InGaAs heterojunction bipolar
transistors (HBTs) has been reduced using a novel double polyimide planarization process …

We report a fabrication technique for 1 μm wide emitter finger InP/GaAs 0.51 Sb 0.49/InP
double heterojunction bipolar transistors (DHBTs). In this technology, we use a wet-etched …

Self-aligned 0.55*3.5\mum^2 emitter InP/GaAsSb/InP double heterojunction bipolar
transistors demonstrating an f_t of 310 GHz and an f_\max of 480 GHz are reported …

Abstract (Ga, In)(As, Sb)-based InP double heterojunction bipolar transistors (DHBTs) exhibit
excellent RF performance combined with a high power handling capability, making them …

In this work the device design and power performance of several AlInAs/InGaAs/InP double
heterojunction bipolar transistors (DHBTs) are reported for 18 GHz. The power cells utilize a …

A method to isolate the base pad from the intrinsic device structure for reducing the extrinsic
base-collector capacitance of InP/InGaAs single heterojunction bipolar transistors (SHBTs) …

In this work, process optimization techniques for high frequency performance of HBTs are
presented. The techniques are focused on reducing parasitic base resistance and base …