2D rhenium dichalcogenides: from fundamental properties to recent advances in photodetector technology

PP Satheesh, HS Jang, B Pandit… - Advanced Functional …, 2023 - Wiley Online Library
Van der Waals (vdW) materials of transition metal dichalcogenides (TMD) family with
semiconducting properties are currently at the forefront of research in the field of …

Effect of Gamma Irradiation on the Structure, Morphology, and Memristive Properties of CVD Grown ReS2 Thin Film

P Aggarwal, P Bisht, S Jana, A Mishra… - Advanced Materials …, 2024 - Wiley Online Library
In this work, effect of gamma irradiation on chemical vapor deposition grown ReS2 thin films
vis‐a‐vis change in its structure, morphology, chemical composition, and memristive …

Large-Area Aligned Growth of Low-Symmetry 2D ReS2 on a High-Symmetry Surface

H Chen, S Jiang, L Huang, P Man, Q Deng, J Zhao… - ACS …, 2024 - ACS Publications
The large-scale preparation of two-dimensional (2D) materials is pivotal in unlocking their
extensive potential for next-generation semiconductor device applications. Wafer-scale …

Two-Dimensional Exciton Oriented Diffusion via Periodic Potentials

Y Dai, G Tao, Y Chen, G Yao, D Liu, Z Dang, Z Liu… - ACS …, 2024 - ACS Publications
Excitonic devices operate based on excitons, which can be excited by photons as well as
emitting photons and serve as a medium for photon-carrier conversion. Excitonic devices …

Electro-optical properties of a strain-induced borocarbonitride monolayer from many-body perturbation theory

J Wan, H Wang, H Shu - Journal of Materials Chemistry C, 2024 - pubs.rsc.org
Exploiting novel graphene-like materials with superior properties is of great interest for nano-
optoelectronics. Here, we explore the electro-optical properties of a novel borocarbonitride …

Effect of stress modulation of Al2O3 and Si3N4 nanolayers on the photoelectric properties of ReS2 photodetectors based on sapphire substrates

X Li, Y Lin, Z Lin, X Liu, Y Zeng - Journal of Alloys and Compounds, 2023 - Elsevier
Atomic layered material is a particular candidate for adjusting the energy band structure of
semiconductor materials through strain engineering, which is an effective and convenient …

Pressure and strain engineering of the structural and electronic transitions in ReS2

L Ma, D Liu, B **ao, Y Cao, Y Wang… - Journal of Physics …, 2023 - iopscience.iop.org
The distinctive crystal structure and anisotropic electrical characteristics of rhenium disulfide
(ReS 2) have garnered growing interest. Pressure and strain engineering has been used to …

Controllable Growth of Large-Scale Continuous ReS2 Atomic Layers

X Sun, E Alim, Y Wen, S Wu, Y Cai, Z Wei, Y Wang… - Crystals, 2023 - mdpi.com
In recent years, two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have
received significant attention due to their exceptional electrical and optical properties …

Unveiling localized electronic properties of ReS2 thin layers at nanoscale using Kelvin force probe microscopy combined with tip-enhanced Raman spectroscopy

Y Luo, W Su, J Zhang, F Chen, K Wu, Y Zeng… - Chinese Physics …, 2023 - iopscience.iop.org
Electronic properties of two-dimensional (2D) materials can be strongly modulated by
localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy …

From Structural Stability to Electronic Flexibility: Unveiling Strain-induced Effects in a MoS/Perylene Orange Hybrid System

MEA Miloudi, O Kühn - arxiv preprint arxiv:2407.10757, 2024 - arxiv.org
This study delves into the interaction between a monolayer of molybdenum disulfide (MoS $
_2 $) and a single Perylene Orange (PO) molecule, representative of inorganic and organic …