Dielectrically-modulated GANFET biosensor for label-free detection of DNA and avian influenza virus: proposal and modeling
This paper introduces a novel device called the Gate All Around Engineered Gallium Nitride
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …
Device physics based analytical modeling for electrical characteristics of single gate extended source tunnel FET (SG-ESTFET)
In this paper, a two dimensional analytical model for Single Gate Extended Source Tunnel
FET has been developed which is based on the solution of Poisson's equation simplified …
FET has been developed which is based on the solution of Poisson's equation simplified …
A new 2 D mathematical modeling of surrounding gate triple material tunnel FET using halo engineering for enhanced drain current
In this paper, an analytical model is developed for new modified Surrounding Gate Triple
Material Tunnel FET with halo do** engineering. The benefits of halo engineering and …
Material Tunnel FET with halo do** engineering. The benefits of halo engineering and …
Machine learning-based multi-objective optimisation of tunnel field effect transistors
The ever-increasing growth of semiconductor industries owing to nano sizing of modern
electronic devices intensifies the need to handle enormous data. It is necessary to rely on …
electronic devices intensifies the need to handle enormous data. It is necessary to rely on …
Analytical modeling and performance assessment of high performance split-gate dielectric modulated InGaAs GAA junctionless MOSFET biosensor
P Kaur, AS Buttar, B Raj - Micro and Nanostructures, 2022 - Elsevier
In this manuscript, split gate dielectric modulated gate-all-around junctionless metal oxide
field-effect transistor (SG-GAA-JLFET) based on III-V compound (InGaAs) has recently come …
field-effect transistor (SG-GAA-JLFET) based on III-V compound (InGaAs) has recently come …
System-level retiming and pipelining
G Venkataramani, Y Gu - 2014 IEEE 22nd Annual International …, 2014 - ieeexplore.ieee.org
In this paper, we examine retiming and pipelining in the context of system-level optimization
techniques. Our main contributions are:(a) functionally equivalent retiming and delay …
techniques. Our main contributions are:(a) functionally equivalent retiming and delay …
Optimization and performance indication of surrounding gate tunnel field‐effect transistors based on machine learning
Selecting designs that efficiently optimize multiple objectives simultaneously is an important
problem in several distinct industries. Typically, there is not a single ideal design; rather …
problem in several distinct industries. Typically, there is not a single ideal design; rather …
Analytical modeling of dual material gate all around stack architecture of tunnel FET
An analytical model has been proposed to study the behavior of Dual Material Gate All
Around Stack Architecture of TFET (DMGAASA TFET) in suppressing short channel effects …
Around Stack Architecture of TFET (DMGAASA TFET) in suppressing short channel effects …
Analytical modeling of subband quantization and quantum transport in very Low-dimensional dual metal double gate TFET
SS Kanrar, SK Sarkar - Superlattices and Microstructures, 2021 - Elsevier
We present a novel and comprehensive quantum analytical modeling of a sub-20 nm Dual
Metal Double Gate (DMDG) Tunnel Field Effect Transistor (TFET) for the first time in …
Metal Double Gate (DMDG) Tunnel Field Effect Transistor (TFET) for the first time in …
Analytical threshold voltage model for strained silicon GAA-TFET
HY Kang, HY Hu, B Wang - Chinese Physics B, 2016 - iopscience.iop.org
Tunnel field effect transistors (TFETs) are promising devices for low power applications. An
analytical threshold voltage model, based on the channel surface potential and electric field …
analytical threshold voltage model, based on the channel surface potential and electric field …