In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

Gallium nitride (GaN) thin film was grown by Nd: YAG pulsed laser ablation with two laser
ablation energies. The optical band gaps and crystallinities of the specimens were studied to …

Porous semiconductor compounds represent a class of materials which is under an intense
research focus over the last years. Herein, morphologies and topologies produced by …

We provide an optical study on GaN thin film testing created by pulsed laser (ablation) in
liquid. This study applied six different energies for ablated GaN nanoparticles in the liquid …

Two types of GaN based photoelectrodes using either horizontally aligned or vertically
aligned nanopores have been fabricated by means of using an electrochemical etching …

A thin film of gallium nitride (GaN) was successfully grown onto p-Si by a radio-frequency
(RF) magnetron sputter for different argon flows. X-ray diffraction (XRD) results proved that …

Abstract Gallium nitride (GaN)(GaN) thin films were grown on the Al _ 2 O _ 3\left (0 0 0
1\right) Al 2 O 3 0001 substrate using radio frequency (RF) magnetron sputtering under …

We investigate the optical properties of porous GaN films of different porosities, focusing on
the behaviors of the excitonic features in time-integrated and time-resolved …

In this study, the gallium nitride (GaN) thin film was successfully deposited on the n− Si
substrate using an RF magnetron sputter under various argon flows. Experimental …

In this paper, we report on results of a systematic study of porous morphologies obtained
using anodization of HVPE-grown crystalline GaN wafers in HNO 3, HCl, and NaCl …