Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Towards high efficiency nanowire solar cells
Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …
solar cell applications. In this article we review the development of the field with a special …
III–V semiconductor single nanowire solar cells: a review
III–V semiconductor nanowires have gained intensive attention for solar cell applications
due to their unique geometrical, optical, and electrical properties, as well as improved …
due to their unique geometrical, optical, and electrical properties, as well as improved …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
[HTML][HTML] Do** concentration dependence of the photoluminescence spectra of n-type GaAs nanowires
In this letter, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the
metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our …
metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our …
Determination of n-type do** level in single GaAs nanowires by cathodoluminescence
We present an effective method of determining the do** level in n-type III–V
semiconductors at the nanoscale. Low-temperature and room-temperature …
semiconductors at the nanoscale. Low-temperature and room-temperature …
Progress in do** semiconductor nanowires during growth
The anisotropic growth of one-dimensional or filamental crystals in the form of microwires
and nanowires constitutes a rich domain of epitaxy and newly enabled applications at …
and nanowires constitutes a rich domain of epitaxy and newly enabled applications at …
Comparing Hall effect and field effect measurements on the same single nanowire
We compare and discuss the two most commonly used electrical characterization
techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and …
techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and …
Spatially resolved do** concentration and nonradiative lifetime profiles in single Si-doped InP nanowires using photoluminescence map**
We report an analysis method that combines microphotoluminescence map** and lifetime
map** data of single semiconductor nanowires to extract the do** concentration …
map** data of single semiconductor nanowires to extract the do** concentration …
Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
High-performance broadband photodetectors offering spectral tunability and a high gain-
bandwidth product are crucial in many applications. Here, we report on a detailed …
bandwidth product are crucial in many applications. Here, we report on a detailed …