HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Under thin film deposition, when used in conjunction with the semiconductor atomic layer
deposition (ALD) method, the choice of precursor determines the properties and quality of …

A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is
reported by atomic layer deposition with novel bulky dimethyl [N‐(tert‐butyl)− 2‐methoxy‐2 …

Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant
attention has been devoted to studying hafnia-based ferroelectric material systems due to …

Area-selective atomic layer deposition (AS-ALD) has garnered significant attention as a
promising bottom-up patterning process for sub-10 nm scale technology, offering unmatched …

Deposition of high-k dielectric thin films is essential for manufacturing modern electronic
devices. Atomic layer deposition (ALD) is an attractive technology for depositing high-k …

Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-
steep logical switching and low power non-volatile memory functions, have significant …

We demonstrate the programmable light intensity of a micro-LED by compensating threshold
voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable …